MIT Lincoln Laboratory Compound Semiconductor Process Engineer in Lexington, Massachusetts
When NASA made history in 2013 with the longest laser communication link ever demonstrated (from a Moon-orbiting satellite to Earth), our group was behind the satellite's laser transmitter and the ground terminals' highly sensitive photon detectors that enabled the link. We have a long history of developing advanced solid-state, fiber, and diode laser technologies for the scientific and defense communities. Recently, our lasers have been key to enabling cutting-edge ladar systems that can map terrain with greater accuracy and area coverage rates, providing much needed capabilities in disaster relief efforts, such as the disaster mapping of Hurricanes Harvey and Irma in 2017. We are also creating cryogenic-laser-based illuminators for airborne sensors that can detect and track fast-moving objects with highly dynamic platform motion. Finally, we've led the laser community in developing beam-combining techniques for high-energy laser systems. Using these techniques, our fiber laser system have demonstrated record-breaking levels of beam brightness and near-ideal beam quality.
The Laser Technology and Applications Group seeks an individual to assist in the development and fabrication of compound semiconductor optoelectronic devices. These devices find applications in a wide range of systems including directed energy, lidar, science, sensing, and communications. Example components include high-power diode lasers and optical amplifiers, high-current waveguide photodiodes, wideband optical modulators, and arrays of these components and photonic integrated circuits (PICs). PICs will be realized using both monolithic and hybrid integration techniques. Material systems under development include InP, GaAs, GaN, and their associated ternary and quaternary compositions. The successful candidate will be a member of a multi-disciplinary team whose mission is to develop prototypes of advanced components and integrated subsystems.
Requirements for the position include a Bachelor’s degree in Electrical Engineering, Chemical Engineering, Materials Science and Engineering, Physics, Chemistry or related field with 2 or more years of experience in the fabrication of compound-semiconductor-based devices or integrated circuits. The candidate will be responsible for the fabrication of compound semiconductor (III-V) devices. Applicants need to have direct chemical laboratory experience, either in educational or professional settings. This is a hands-on role requiring proficiency with multiple compound-semiconductor fabrication processes (e.g., lithography, wet etching, reactive-ion etching, sputtering and e-beam deposition of metal and dielectric materials, wafer and device cleaving). The candidate must exhibit a detailed understanding of the interplay between material properties, fabrication processes, and device performance. Knowledge of chemistry, electrical and optical characterization techniques, packaging techniques, and epitaxial material growth is desirable, as is experience in both research laboratory and industrial production environments. Candidate must have a growth mindset, be innovative and highly motivated, have excellent documentation and communication skills, and be prepared to work in a dynamic multi-disciplined team environment.
For Benefits Information, click http://hrweb.mit.edu/benefits
Selected candidate will be subject to a pre-employment background investigation and must be able to obtain and maintain a Secret level DoD security clearance.
MIT Lincoln Laboratory is an Equal Employment Opportunity (EEO) employer. All qualified applicants will receive consideration for employment and will not be discriminated against on the basis of race, color, religion, sex, sexual orientation, gender identity, national origin, age, veteran status, disability status, or genetic information; U.S. citizenship is required.
Requisition ID: [[id]]